Focus monitoring method, exposure apparatus and mask for exposure

专利摘要:
PURPOSE: A mask for exposure is to provide a high precision focus measuring method based upon a projection optics system without using any special mask for focus monitoring. CONSTITUTION: A device pattern is formed on a pattern area on a main surface of its transparent substrate to be used for transfer of the device pattern on a wafer via the projection optics system. A pattern for focus monitor comprises a micro-pitched small box mark and a large box mark enclosing the small one installed in a kerf area outside the pattern area on the main surface of its transparent substrate. A pellicle frame blocks the element of any one ± diffractive lights incoming from the small box mark of the pattern for focus monitoring and passes through a pupil of the projection optics system.
公开号:KR20020062829A
申请号:KR1020020003822
申请日:2002-01-23
公开日:2002-07-31
发明作者:스따니다꾸미찌；후지사와다다히또；사또다까시；사까모또다까시；아사노마사후미；이노우에소오이찌
申请人:가부시끼가이샤 도시바；
IPC主号:

专利说明:

FOCUS MONITORING METHOD, EXPOSURE APPARATUS AND MASK FOR EXPOSURE}
[54] BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a focus monitor method suitable for focus control of a projection aligner used in the manufacture of semiconductor devices, liquid crystal display devices, etc., an exposure apparatus using this focus monitor method, or a mask used in the focus monitor method. will be.
[55] In recent years, with the miniaturization of device patterns, it is difficult to sufficiently obtain process margins such as exposure latitude and depth of focus. Therefore, in order to use a small process margin effectively and to prevent a fall of a yield, the technique which monitors an exposure dose and a focus more accurately is required.
[56] In the conventional focus management method, exposure is performed by varying the focus value using a mask for quality control in which a rhombic mark 101 as shown in Fig. 1A is formed, and then transferred to a wafer as shown in Fig. 1B. The focal point at which the pattern length L of the rhombus mark 102 is longest is used as the best focus. In this case, the relationship between the pattern length Le and the defocus is as shown in Fig. 2 (see Japanese Patent Laid-Open No. 10-335208).
[57] The rhombus mark is resolved to the details at the most appropriate focus point, but as the defocus is reduced, the resolution of the details is reduced. Therefore, the pattern length Le of the rhombus mark transferred on the wafer becomes the maximum at the position of the best focus, and exhibits a characteristic that is approximately symmetrical with respect to the positive and negative defocus. As the usage of this mark, it is applicable to finding the best focus before manufacture starts an exposure process.
[58] However, this kind of method had the following problem. That is, when trying to manage the focus conditions of the manufacturing rod exposed by the same exposure conditions using a rhombus mark, only by monitoring the pattern length Le of the rhombus mark after transfer, (1) the shift direction of focus It was not known, and (2) there was a problem of being affected by the fluctuation of the exposure amount.
[59] In addition, as another focus monitor method, a method of detecting the amount of change in focus as a position shift amount of a pattern without affecting the exposure amount has been proposed (see USP5,300,786).
[60] However, the detection sensitivity of the focus by the mark in this method greatly depends on the shape of the light source or the magnitude of the coherence factor σ. That is, although the sensitivity can be sufficiently obtained under relatively low sigma exposure conditions, sufficient sensitivity cannot be obtained under relatively large sigma conditions or annular illumination conditions, which are generally used conditions.
[61] In addition, in the above-described method, it is necessary to form a phase shifting film in creating a mark, so that the burden on mask manufacturing is increased, and the application to a mask for quality control is feasible. It was difficult.
[62] For this reason, the implementation of the focus monitor method which can measure the focus by projection optics with high sensitivity accurately, without using a special mask for a focus monitor was desired.
[1] 1A and 1B show a rhombus monitor pattern used in a conventional focus monitor and a resist pattern obtained by transferring the rhombus pattern, respectively;
[2] Fig. 2 is a diagram showing the relationship between the pattern length when the diamond monitor pattern is transferred and the focus at that time in the conventional focus monitor technique.
[3] 3 is a diagram showing an example of a box in box pattern used in the first embodiment.
[4] 4 is a system configuration diagram for realizing a focus monitor method according to the first embodiment.
[5] Fig. 5 is a diagram showing an arrangement of two chips exposed in the first embodiment and a focus monitor pattern therein;
[6] 6A and 6B show a planar shape of an unshielded ring-shaped illumination and a situation of irradiation of light beams onto a wafer surface;
[7] 6C and 6D show the planar shape of the half-shielded ring-shaped illumination and the irradiation condition of the light beam onto the wafer surface;
[8] Fig. 7 is a diagram showing a relationship between focus shift and position shift in the first embodiment.
[9] Fig. 8 is a system configuration diagram for realizing the focus monitor method according to the second embodiment.
[10] Fig. 9 shows the arrangement of the focus monitor pattern exposed on the wafer in the second embodiment.
[11] 10 is a system configuration diagram for realizing a focus monitor method according to the third embodiment.
[12] Fig. 11 shows the arrangement of the two chips exposed in the third embodiment and a focus monitor pattern therein;
[13] Fig. 12 shows the arrangement of the two chips exposed in the fourth embodiment and the focus monitor pattern therein;
[14] Fig. 13 is a sectional view of the mask for explaining the constitution of the mask according to the fifth embodiment.
[15] 14A and 14B are sectional views of the mask for explaining the structure of the mask according to the sixth embodiment.
[16] Fig. 15 is a system configuration diagram for realizing a focus monitor method according to the seventh embodiment.
[17] 16A is a system configuration diagram for realizing the focus monitor method according to the eighth embodiment.
[18] Fig. 16B is a diagram showing the positional relationship of illumination light on the pupil plane in the eighth embodiment.
[19] 17 is a diagram showing another example of the system configuration according to the eighth embodiment.
[20] 18A and 18B are sectional views of the mask for explaining the structure of the mask according to the ninth embodiment.
[21] Fig. 19 is a sectional view of the mask for explaining the constitution of the mask according to the tenth embodiment.
[22] 20 is a schematic diagram for explaining a main portion and diffracted light of an exposure apparatus.
[23] 21A to 21F are plan views showing examples of the box-in-box type focus monitor pattern used in Example (s).
[24] FIG. 22 is a partial cross-sectional view of the exposure mask showing the positional relationship between the focus monitor pattern and the pericle frame in the eleventh embodiment, showing a case where the first diffraction angle from the focus monitor pattern is minimized; FIG. .
[25] FIG. 23 is a partial cross-sectional view of the exposure mask showing the positional relationship between the focus monitor pattern and the pericle frame in the eleventh embodiment, showing a case where the first diffraction angle from the focus monitor pattern is maximized; FIG. .
[26] FIG. 24 is a partial cross-sectional view of the exposure mask showing the positional relationship between the focus monitor pattern and the pericle frame in the eleventh embodiment, showing the minimum and maximum ranges of the first diffraction angle; FIG.
[27] FIG. 25 is a diagram showing a relationship between a position shift amount and a defocus between patterns in the eleventh embodiment; FIG.
[28] Fig. 26 is a plan view showing an example in which the focus monitor pattern is inclined at 45 degrees and arranged in a dicing area as a modification of the eleventh embodiment.
[29] 27A is a plan view showing another example of the eleventh embodiment in which the focus monitor pattern is disposed outside the dicing area;
[30] 27B is a plan view showing another example of the eleventh embodiment in which the focus monitor pattern is disposed outside the dicing area and the focus monitor pattern is disposed on the dicing line of the adjacent chip by step and repeat exposure;
[31] FIG. 28 is a partial plan view of a mask in accordance with still another modification of the eleventh embodiment, showing an example in which the focus monitor pattern is moved in a dicing area little by little;
[32] Fig. 29 is a partial sectional view of the exposure mask according to the twelfth embodiment, showing an example in which one component of the first diffracted light from the focus monitor pattern is blocked in a part of a region of a specially processed pellicle film;
[33] Fig. 30 is a partial sectional view of the exposure mask according to the thirteenth embodiment, showing an example in which one component of the first diffraction light from the focus monitor pattern is blocked by a light shielding part accompanying the exposure position;
[34] Fig. 31 is a plan view of the exposure mask according to the fourteenth embodiment, showing an example of blocking one component of the first diffracted light from the focus monitor pattern with a light shielding part attached to the frame;
[35] Fig. 32 is a partial sectional view of the exposure mask according to the fifteenth embodiment, showing an example in which a hole is opened in the pericle frame to transmit diffracted light from the device pattern through this hole;
[36] 33A and 33B are views for explaining the sixteenth embodiment, FIG. 33B is a partial sectional view of the exposure mask, and FIG. 33A is a partial view of the exposure mask. The top view shows the definition of the distance L between the focus monitor pattern and the pericle frame when the focus monitor pattern is disposed at any position of the dicing area.
[37] <Explanation of symbols for the main parts of the drawings>
[38] 301, 402, 405, 502: outer box pattern
[39] 302, 403, 406: inner box pattern
[40] 401, 1304: Illuminated light source
[41] 404, 804, 1004, 1301, 1501, 1801, 1901, 2710: light blocking member
[42] 407, 807, 1007, 1504, 1604, 2003: mask
[43] 408, 2006: Wafers
[44] 410, 2601: device pattern area
[45] 411r, 411l, 811r, 811l: Dicing Line Area
[46] 502, 503, 505, 506, 902, 903, 1102, 1103, 1105, 1106: transfer pattern
[47] 1303, 1403, 1903: transparent substrate
[48] 1401, 1601: optical element
[49] 1402, 1802: Focus Monitor Pattern
[50] 604, 1806, 2604: device pattern
[51] 1505, 1605, 2605: Pattern for Focus Monitor
[52] 1502, 1602: reticle blind face
[53] 2608: Pericle Frame
[63] The focus monitor method of the first aspect of the present invention is effective by transferring a pattern for focus monitor on a mask illuminated by electromagnetic waves or electron beams onto a substrate to be exposed by a projection optical system and measuring the deviation of the pattern on the substrate. In the focus monitor method for monitoring the
[64] Preparing the mask having the focus monitor pattern formed of at least two kinds of pattern groups;
[65] Illuminating the pattern group A of the at least two pattern groups with the illumination light in a state in which the center of gravity of the illumination light source in the illumination optics is off-axis;
[66] Illuminating at least the pattern group B of the at least two pattern groups with illumination light in a state where the center of gravity of the illumination light source is on the axis;
[67] And measuring the positional deviation between the pattern group A and the pattern group B transferred on the substrate (Note: repetition of claim 1).
[68] The exposure apparatus of the 2nd aspect of this invention,
[69] The effective focus is monitored by transferring the first and second patterns on the focus monitor mask illuminated by electromagnetic waves or electron beams onto the substrate to be exposed by the projection optical system, and measuring the first and second patterns on the substrate. As an exposure apparatus to
[70] An illumination optical system for illuminating the first pattern in a state where a center of gravity of an illumination light source is present on an axis;
[71] An exposure apparatus (claim 16) having a component interposed between the illumination optical system and configured to illuminate the second pattern in a state where the center of gravity is shifted from the axis.
[72] The exposure mask of the third aspect of the present invention,
[73] A transparent substrate having first and second main surfaces, the second main surface having first and second patterns for a focus monitor formed on the first main surface facing an illumination light source;
[74] A component for axially shifting the center of gravity of the illumination light source disposed on or in the transparent substrate so as to shield the second pattern from the illumination light source (claim 22).
[75] The exposure mask of the fourth aspect of the present invention is an exposure mask used for transferring a device pattern onto a wafer via a projection optical system,
[76] A transparent substrate having a main surface,
[77] The device pattern formed in the pattern region on the main surface of the transparent substrate;
[78] A focus monitor pattern provided in an outer region of the pattern region on the main surface of the transparent substrate and formed in two kinds of patterns having different diffraction angles;
[79] The diffraction light from the pattern having the larger diffraction angle among the focus monitor patterns blocks the components of any one of two opposite directions of diffraction light passing through the pupil of the projection optical system. A shielding part is provided (claim 26).
[80] Focus monitor method of the fifth aspect of the present invention,
[81] In the method of monitoring the focus at the time of transferring a device pattern on a wafer via a projection optical system using the exposure mask in which the device pattern was formed in the pattern area on the main surface of a transparent substrate,
[82] Providing a focus monitor pattern formed of two kinds of patterns having different diffraction angles in an outer region of the pattern region on one main surface of the transparent substrate;
[83] When the device pattern is transferred onto a specimen, one of the opposite diffracted light passing through the pupil of the projection optical system is blocked by the diffracted light from the pattern having the larger diffraction angle among the focus monitor patterns. Performing the processing
[84] Generating a position shift on the sample between the two kinds of patterns of the focus monitor pattern;
[85] Detecting the position shift amount by focus shift (claim 36).
[86] Prior to the description of the embodiments, the features of the following first to tenth embodiments will be described.
[87] When the focus monitor pattern is illuminated with illumination light in the state where the center of gravity of the illumination light source is axially shifted, a positional shift accompanying focus shift occurs in the pattern formed on the sample. On the other hand, when the pattern for a monitor is illuminated by the illumination light in the normal illumination state in which the center of gravity of an illumination light source exists on an axis | shaft, the position shift accompanying a focus shift does not arise in the pattern formed on a sample.
[88] Therefore, by illuminating the pattern group A with the illumination light in the state where the center of gravity of the illumination light source is off-axis, and illuminating the pattern group B with the illumination light in the normal illumination state in which the center of gravity of the illumination light source exists on the axis, Focus shift can be measured by measuring the relative position of the pattern group A and the pattern group B formed on the board | substrate. The first to tenth embodiments apply this feature.
[89] In these embodiments, as the focus monitor pattern, a box-in box pattern that is usually used for misalignment inspection can be used. Covering a part of the box-in-box pattern with respect to the illumination light source can cause so-called telecentric shifts in which the proportion of diffracted light differs under ring-shaped illumination conditions most often used as exposure conditions. As a result, the position of the box-in box pattern transferred with defocus shifts. When this position shift is matched and measured with a shift inspection apparatus etc., the focus value at the time of exposure can be easily monitored. As a result, the amount of focus displacement can be measured with high accuracy without using a special pattern such as a phase shift.
[90] Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[91] (First embodiment)
[92] In the first embodiment, two or more sets of patterns existing on the same mask are used as the basic configuration of the focus monitor pattern. Specifically, as shown in Fig. 3, a pattern of either of the outer box pattern 301 or the inner box pattern 302 is used, using a box-in box pattern widely used for alignment inspection and the like. It has a means for shielding a part of illumination light to illuminate.
[93] In Fig. 4, the mask 407 is illuminated by illumination (ring-shaped illumination) 401, and the pattern of the mask 407 is transferred to the chip 409 on the wafer 408 via a projection optical system (not shown). Show the appearance. As a focus monitor pattern, as shown, two inner box patterns 403 (pattern group A), 406 (pattern group C) and two outer box patterns 402 (pattern group B) and 405 (pattern group D), respectively. It is arrange | positioned at the both ends on the mask 407.
[94] More specifically, the respective box patterns 402, 403, 405, and 406 are disposed in the dicing line regions 411 r and 411 l (L) that are outside of the device pattern region 410 of the mask 407.
[95] The inner box patterns 403 and 406 are disposed in the right dicing line region 411r of the device pattern region, and the outer box patterns 402 and 405 are disposed in the left dicing line region 411l. The dicing line regions where the inner box patterns 403 and 406 and the outer box patterns 402 and 405 are arranged may be replaced left and right.
[96] However, regarding the inner box pattern 403, the light shielding member 404 is arrange | positioned so that a part of illumination light which illuminates this pattern may be shielded. Specifically, corresponding to the position of the inner box pattern 403, the light blocking member 404 is disposed above the mask surface facing the illumination light source 401. The light blocking member 404 may be formed in intimate contact with the mask 407 and integrally with the mask. Alternatively, the light blocking member 404 may be isolated from the mask 407 and held on the exposure apparatus side.
[97] The pattern is transferred onto the wafer using such a mask. The specific order is as follows. First, the mask 407 is loaded into the optical exposure apparatus, the wafer 408 coated with a resist is introduced into the exposure apparatus, and the mask pattern is applied to the wafer 408 while step-and-repeat as shown in FIG. 4 in the exposure apparatus. Transfer to the phase.
[98] The pattern transfer may be any scanner that scans and exposes the mask pattern region even in a step of collectively exposing the mask pattern region. The stepping amount at that time is determined by how the device pattern is laid out on the wafer 408.
[99] When exposing as mentioned above, it exposes so that the design center of the inner box patterns 403 and 406 and the outer box patterns 402 and 405 may correspond. That is, when laying out both box patterns on the mask 407, the important thing is to determine the positions of both box patterns so that the center positions of both box patterns on the wafer coincide and exposed when ideally stepped and exposed at the assumed stepping. It is.
[100] Fig. 5 shows a schematic plan view of the chip exposed on the wafer. Reference numerals 502, 503, 505, and 506 in Fig. 5 show transfer patterns of the box patterns 402, 403, 405, and 406 in Fig. 4, respectively. The chip region on the left is transferred by the Nth exposure, and the chip region on the right is transferred by the (N + 1) th exposure.
[101] The pattern 503 exposed by the partially shielded illumination shifts the position of the transferred pattern along with the focus shift for reasons described later. If there is no focus shift, it will be located at 503 'in Fig. 5 overlapping the center of the outer box pattern 502. Therefore, when the positional shifts of the box-in box patterns 502 and 503 formed on the wafer 408 by the patterns 402 and 403 on the mask 407 are measured, the focus can be monitored.
[102] However, since the box-in box pattern is formed by the exposure over two chips, the positional shifts of 502 and 503 indicate the positional accuracy when the exposure apparatus exposes each chip, that is, the error due to the stepping distortion of the projection lens. It is included.
[103] Therefore, it employ | adopts based on the box-in box pattern of code | symbol 505,506 formed without using a light shielding member. This pattern does not cause misalignment with respect to the focus. If it is misaligned, it is caused by stepping distortion. Therefore, the positional shift is purely caused by focusing by measuring the positional shift of the box-in-box patterns of these codes 505 and 506 and subtracting the value from the positional shifted values of the codes 502 and 503.
[104] In the following, the effect is given by taking ring-shaped illumination which is often used in the exposure of the actual device pattern as an example. As shown in Fig. 6A, when the focus monitor pattern is illuminated with no light shielding member in the illumination, so-called normal illumination, the state of diffracted light on the wafer surface is shown in Fig. 6B.
[105] If the focus monitor pattern used in the first embodiment has a relatively large pitch, the ratio of the zeroth order diffracted light among the diffracted light is very high, and thus the light flux may be considered to be represented by the trajectory of the zeroth order diffracted light. For ease of explanation, in Fig. 6, only the strongest portion of the ring-shaped illumination light that contributes to the sea is typically recorded, but this intensity is inherently distributed.
[106] It can be seen from FIG. 6B that the light intensity is symmetrical with respect to the wafer surface. That is, the position shift of the pattern transferred with respect to a focus position cannot occur.
[107] On the other hand, as shown in Fig. 6C, when a part of the illumination (here half is shown) is blocked by the light shielding member, the light intensity is not symmetrical with respect to the wafer surface. For this reason, the position of the pattern transferred against the focus position is shifted.
[108] In this manner, if two sets of patterns having different behaviors with respect to the focus are transferred onto the wafer and the relative position shift amount can be measured, an accurate focus monitor can be achieved.
[109] 7 shows the results in the first embodiment. The horizontal axis is defocus, and the relative position shift amount between the patterns 505 and 506 from the relative position shift amount between the pattern 502 which does not cover the light source with the light blocking member and the pattern 503 half covered with the light blocking member on the vertical axis [ positional shift (deviation)] is obtained. From this figure, it can be seen that the position shift amount of about 20 nm is measured for the defocus of 0.1 mu m, so that the shift in focus can be sufficiently detected.
[110] In addition, although ring type illumination was used as illumination shape in 1st Example, it is not limited to this, The same effect can be acquired also in illumination shape other than this. Further, in the first embodiment, although the light blocking member 404 for illumination light is disposed at a position corresponding to the inner box pattern, the present invention is not limited, and the light blocking member for shielding a part of the illumination light with respect to the outer box pattern is provided. You may arrange.
[111] As described above, according to the first embodiment, the focus monitor on the wafer at the time of exposure can be performed with high accuracy. Until now, there has been a method of performing a focus monitor, but there is a limitation that a special pattern or a phase shift film must be used for the purpose. In the first embodiment, a high-definition focus monitor is made possible by adding some improvement to the existing mask without using such a special mask. In the measurement, an existing alignment accuracy measuring device can be used, and therefore, there is no need to use a new device for this purpose.
[112] In addition, with respect to the pattern for alignment accuracy measurement (focus monitor) in order to perform a focus monitor, a part of illumination is interrupted | blocked by a light shielding member, and position shift with respect to a focus can be caused. When this position shift is read out by the alignment inspection apparatus, this measurement becomes a focus monitor of a wafer surface as it is. According to the first embodiment, the focus monitor becomes easy, and it is possible to always expose with an appropriate focus. As a result, an improvement in yield can be expected.
[113] (2nd Example)
[114] 8 is a diagram showing an example of a system configuration for realizing the focus monitor method according to the second embodiment of the present invention. In Fig. 8, reference numerals 801 to 803, 807 to 810, 811r, and 811l correspond to 401 to 403, 407 to 410, 411r, and 411l in Fig. 4. However, the pattern groups 802 and 803 are different in that they are formed in the same dicing line 811r (even in dicing line 811l). The pattern groups 802 and 803 are not limited to box-in box patterns, and may be simple line patterns.
[115] In the second embodiment, two or more sets of pattern groups A 803 and B 802 existing adjacent to the same mask are used as the basic configuration of the focus monitor pattern. The distance p between these pattern groups A and B is measured on the mask 807 in advance. The pattern group B is exposed in a normal state. However, when the pattern group A is exposed, the light source member 804 as shown in FIG. 8 is disposed with respect to the illumination light so that the illumination light source is off-axis. Exposure is performed in the state of.
[116] At this time, when the focus shifts from the wafer surface, the behavior differs with respect to the pattern groups A and B for the reasons described later. Specifically, the pattern group A does not cause positional shift due to the focus shift, but the position of the pattern group B is transferred onto the shifted wafer due to the focus shift.
[117] 9 shows a transfer pattern on a wafer exposed using this method. On the chip 909, reference numeral 903 denotes a pattern in which the pattern group A 803 is exposed. Reference numeral 903 'denotes a position to be transferred when there is no focus shift, but in the second embodiment, the pattern group A causes position shift due to the focus shift of the wafer surface. Reference numeral 902 denotes a pattern in which the pattern group B 802 is exposed. Since the illumination light illuminating the pattern group B does not cause an axial shift, the position of the pattern 902 does not shift even if the focus shift occurs.
[118] Thus, by measuring the distance between the transfer patterns 902 and 903 on the wafer, and subtracting the distance p that was originally on the mask from the value to a value converted into a value on the wafer, the group of patterns resulting from the shift in focus The position shift amount of A is measured. Then, the focus monitor can be obtained by obtaining this position shift amount. Therefore, the same effects as in the first embodiment can be obtained.
[119] (Third Embodiment)
[120] Fig. 10 is a diagram showing a system configuration example for realizing the focus monitor method according to the third embodiment of the present invention. Reference numerals 1001 to 1010, 1011r and 1011l in Fig. 10 correspond to 401 to 410, 411r and 411l in Fig. 4, respectively.
[121] The third embodiment differs from the first embodiment in that it uses a line pattern instead of a box in box pattern. That is, as shown in FIG. 10, line patterns 1007 and 1007 and line patterns 1002 and 1006 are disposed in dicing regions 1011r and 1011l at both ends on the same mask 1007, respectively. For the pattern 1003 only, the light shielding member 1004 is disposed on the mask to which the pattern corresponds (the dicing line may be opposite to left and right). These patterns cause the reference numeral 1003 and the reference numeral 1006 by the Nth exposure to overlap the reference numerals 1002 and 1005 by the (N + 1) th exposure, respectively, by step and repeat.
[122] Among these, the line pattern 1003 causes position shift when the focus shift occurs, similarly to the first embodiment. If the position shift occurs, the position of one side of the pattern that should be overlapped originally is shifted, and thus the line width exposed by overlapping two is increased.
[123] Fig. 11 shows an example of a pattern exposed to each chip on the wafer. Reference numerals 1102, 1103, 1105, and 1106 in Fig. 11 show transfer patterns of the patterns 1102, 1103, 1105, and 1106 in Fig. 1, respectively. Reference numeral 1103 'denotes a position where the pattern 1103 is formed when there is no focus shift.
[124] Here, not only the focus shift but also the position shift due to the stepping of the exposure apparatus, as well as the shift of focus, are included as a factor of changing the line width when two patterns are overlapped. Therefore, it is necessary to monitor the change of the line width only by stepping accuracy using two line-in patterns with the symbols 1005 and 1006. Of course, there are no light blocking members in the line patterns of these numerals 1005 and 1006. Two line widths are measured at the part exposed by overlapping each other.
[125] In the double exposure portions 1105 and 1106, the line width may change due to stepping, and in the double exposure portions 1102 and 1103, the line width may change due to the focus other than the above. Therefore, by subtracting the former line width from the latter line width, it is possible to observe the variation in the line width depending only on the focus. As shown in Fig. 7, the relationship between the variation of the line width and the defocus is obtained in advance, so that the focus monitor can be obtained from the variation of the line width.
[126] (Example 4)
[127] FIG. 12 is a diagram for explaining a fourth embodiment of the present invention, and shows a pattern exposed on a wafer. 12, 1203, 1205, and 1206 in FIG. 12 correspond to 1102, 1103, 1105, and 1106 in FIG.
[128] In the fourth embodiment, the same exposure apparatus system as in Fig. 10 of the third embodiment is used, except that the exposure is performed so as to be in the vicinity of the pattern of adjacent chips as shown in Fig. 12 without overlapping the patterns disposed at both ends of the mask. As a monitoring method, the distance between the patterns 1202 and 1203 is obtained. This distance includes both positional shift due to focus and positional shift due to stepping of the exposure apparatus. Therefore, the focus monitor can be obtained by obtaining only the step by step from the distance between the symbols 1205 and 1206 and subtracting it from the above distance.
[129] According to the fourth embodiment, the focus monitor can be performed in the same manner as in the third embodiment, and since the distance between the patterns is measured instead of the numerical values of the patterns, the direction of the focus shift can be detected.
[130] (Example 5)
[131] Fig. 13 is a sectional view of a mask used in the focus monitor method of the present invention, where 1301 is a light blocking member, 1302 is a focus monitor pattern, and 1303 is a transparent substrate.
[132] In the first to fourth embodiments, a light shielding member 1301 which is different from the means for shielding the illumination light and which shields a part of the illumination light on or opposite to the illumination light source in the mask region corresponding to the focus monitor pattern is provided. To place. In this manner, when the light blocking member 1301 is disposed on the mask surface, part of the illumination light that should be originally used for exposure of the monitor pattern is shielded. That is, in Fig. 13, the illumination light source 1304 is shielded so that only the illumination light source is used for exposure of this pattern. As a result, the center of gravity of the illumination light source is shifted from the optical axis, thereby enabling the focus monitor as described in the first to fourth embodiments.
[133] (Example 6)
[134] Instead of shielding a part of the illumination light as in the sixth embodiment, an optical element that gives an angle to the illumination light may be disposed on or opposite the illumination surface of the mask region corresponding to the focus monitor pattern. Fig. 14A is a sectional view of the mask in the sixth embodiment, where 1401 is an optical element, 1402 is a focus monitor pattern, and 1403 is a transparent substrate.
[135] In the mask of the sixth embodiment, the illumination light incident from directly above is a light 1404 for inclinedly illuminating the focus monitor pattern 1402 on the reticle by the optical element 1401. In other words, by using the optical element 1401, the focus monitor pattern 1402 can be inclinedly illuminated, so that the same effect as in the fifth embodiment can be obtained and the focus monitor can be obtained.
[136] In addition, although a wedge type optical element is used in Fig. 14A, the present invention is not limited to this, and it may be a grating type optical element as shown in Fig. 14B.
[137] (Example 7)
[138] In the fifth embodiment, the light shielding member used for the focus monitor pattern is disposed on the surface opposite to the illumination light source of the mask. The same effect can be obtained even if the light shielding member is disposed in another place.
[139] 15 shows a schematic diagram of the seventh embodiment. In Fig. 15, reference numeral 1501 denotes a light shielding member, reference numeral 1502 denotes a reticle blind surface, reference numeral 1503 denotes a projection lens of an illumination optical system, reference numeral 1504 denotes a mask, reference numeral 1505 for a focus monitor pattern, reference numeral 1506 for a projection lens of a projection optical system, 1507 denotes a wafer surface, and 1508 denotes illumination light.
[140] In the seventh embodiment, the light blocking member 1501 is disposed near the opposing surface of the mask 1504 with the illumination light source and near the optically approximately conjugate conjugate reticle blind surface 1502, and the box described in the first embodiment. The pattern for a focus monitor described in the pattern 1505 or the third embodiment is illuminated. Since the light shielding member 1501 has an effect equivalent to that of the light shielding member 1301 of the sixth embodiment, the same effect as in the sixth embodiment can be obtained and the focus monitor can be achieved.
[141] The light blocking member 1501 can be provided as a component part of the exposure apparatus. If the size of the focus monitor pattern and the installation location are standardized, the light blocking member 1501 provided as standard in the exposure apparatus can be commonly used in various masks. Alternatively, the light blocking member 1501 may be replaced for each mask.
[142] In addition, although the light shielding member was arrange | positioned in the vicinity of the reticle blind surface in 7th Example, it is not limited to this and it may be another place as long as it is an optically conjugate position.
[143] (Example 8)
[144] In the seventh embodiment, the focus monitor is made possible by arranging the light blocking member in the vicinity of the reticle blind surface. Similarly, the focus monitor can also be arranged by arranging the optical elements as used in the sixth embodiment on the reticle blind surface.
[145] 16A shows a schematic configuration diagram of the eighth embodiment. Reference numerals 1601 to 1608 in Fig. 16A correspond to reference numerals 1501 to 1508 in Fig. 15, respectively, and reference numeral 1609 shows illumination light inclined by the optical element 1601. Figs.
[146] The illumination light corresponding to the focus monitor pattern 1605 is inclined by the optical element 1601 provided in the vicinity of the reticle blind surface 1602 which is optically approximately conjugate with the opposing surface of the mask 1604 with the illumination light source. The same effects as in the seventh embodiment can be produced.
[147] Fig. 16B shows the positional relationship of the illumination light at the pupil plane. Fig. 16B shows the case of ring-shaped illumination. Reference numeral 1610 denotes an aperture of the projection lens. By shifting the center position of the illumination light from the center position of the aperture of the projection lens as shown by reference numeral 1612 with respect to the position 1611 of the illumination light originally to be transmitted in the pupil plane, the light intensity distribution asymmetrical with respect to the wafer surface as shown in FIG. 6C is obtained. It can be formed, and since a monitor pattern produces position shift with respect to a focus, a focus monitor is attained.
[148] In addition, although a wedge type optical element is used in Fig. 16A, the present invention is not limited to this, and it may be a grating type optical element as shown in Fig. 17. Reference numerals 1701 to 1709 in Fig. 17 correspond to reference numerals 1601 to 1609 in Fig. 16, respectively.
[149] The optical element 1601 can be provided as a component of the exposure apparatus. By standardizing the size and location of the focus monitor pattern, the optical element 1601, which is provided as standard in the exposure apparatus, can be commonly used in various masks. Alternatively, the optical elements 1601 may be replaced for each mask.
[150] In addition, although the optical element was arrange | positioned in the vicinity of the reticle blind surface in 8th Example, it is not limited to this, It may be another place as long as it is an optically conjugate position.
[151] (Example 9)
[152] In the seventh embodiment, a light shielding member was provided on the opposite surface of the mask to the illumination light source, and a part of the illumination light in the focus monitor pattern was shielded. In this case, it is also necessary to consider the effect on the device pattern existing on the same mask. That is, if light to be used for exposure of the device pattern is blocked, there is a possibility that it will greatly affect the device pattern to be normally exposed. Therefore, this focus monitor method should be performed to avoid the influence on the device pattern.
[153] 18A shows an example in the mask sectional view. In Fig. 18, reference numeral 1801 denotes a light blocking member, reference numeral 1802 denotes a focus monitor pattern, reference numeral 1803 denotes a transparent substrate, and reference numeral 1806 denotes a device pattern present in the mask. The positional relationship between the light blocking member 1801, the focus monitor pattern 1802, and the device pattern 1806 is as shown in the drawing, and the edge of the light blocking member 1801 corresponds to the center position of the focus monitor pattern 1802. Shall be.
[154] In order to prevent the illumination light to be exposed to the device pattern from being blocked by the light blocking member 1801, it is necessary to arrange the focus monitor pattern 1802 at a position satisfying the following expression (1) from the shortest end of the device pattern.
[155]
[156] Where Lg is the distance from the device pattern to the box-in box pattern, W is the thickness of the mask, and θ is the illumination angle in the mask material. If the wafer-side numerical aperture of the projection lens is NA, the refractive index in the exposure light of the mask material (usually SiO ₂ ) is n, and the mask magnification is M, it is an angle where sin θ = NA / nM.
[157] When this condition is not satisfied, it becomes like FIG. 18B, The illumination light which should expose a device pattern is also shielded by the light shielding member 1801 on the back surface of a box pattern. Therefore, if Equation 1 is satisfied, the focus monitor can be made so as not to have any influence on the device pattern.
[158] (Example 10)
[159] In the fifth embodiment, in order to shield the box pattern, the light shielding member is disposed on the surface opposite to the illumination light source of the mask. However, in order not to affect the device pattern at all, it is necessary to satisfy the above expression (Fig. 1). 18a]. However, since the thickness of the mask is determined, it is necessary to distance the focus monitor pattern from the device pattern region by at least W x tan θ, which causes an increase in chip area. In order to reduce the area of the chip, this distance may be made as small as possible.
[160] 19 is a cross sectional view showing the configuration of the mask in the tenth embodiment. In Fig. 19, reference numeral 1901 denotes a light blocking member, reference numeral 1902 denotes a focus monitor pattern, reference numeral 1903 denotes a transparent substrate, and reference numeral 1906 denotes a device pattern present in the mask. As shown in this figure, if the light blocking member 1901 is embedded in the transparent substrate 1903 or the light blocking member 1901 can be formed in the substrate, the W in the above formula (1) becomes small, and only the focus monitor is used. The pattern can be arranged in the vicinity of the device pattern region.
[161] By using such a mask, the focus monitor can be performed in a state where the distance Lg between the device pattern and the focus monitor pattern is made smaller, leading to a reduction in chip area.
[162] As described above, according to the first to tenth embodiments, the pattern group A for the focus monitor formed on the mask is illuminated by the illumination light in the state where the center of gravity of the illumination light source is axially shifted, and the other pattern group B is illuminated. The focus shift can be measured by illuminating with illumination light in a normal illumination state in which the center of gravity of the light source is present on the axis, and measuring the relative position between the pattern group A and the pattern group B formed on the substrate. In this case, the focus by the projection optical system can be accurately measured with high sensitivity without using a special mask for the focus monitor.
[163] In the first to tenth embodiments, pattern shift was caused by axially shifting the irradiated light to a part of the focus monitor pattern, thereby performing the focus monitor. The method for causing the pattern shift is not limited to the above-described embodiment, but another method will be described in the eleventh to sixteenth embodiments below. Prior to the description of specific embodiments, features common to subsequent embodiments will be described.
[164] The pattern used in the following example changes a part of the pattern used for alignment precision measurement, such as the box-in-box pattern used also in 1st Example. In addition, the arrangement is appropriately set in relation to the actual device pattern.
[165] 20 shows an optical system of a general exposure apparatus. In Fig. 20, reference numeral 2001 denotes an illumination light source, 2002 denotes a condenser lens, and is a major element of the illumination optical system. 2003 is an exposure mask, 2004 is a reduction projection lens which is a major element of a projection optical system, 2005 is a pupil plane, and 2006 is a wafer. Light irradiated to the mask 2003 from the illumination optical system is diffracted at the mask surface, and divided into 0th order light 2010, + 1st order light 2011, -1st order light 2012, and the like.
[166] Under the illumination conditions symmetrical with respect to the optical axis, when no telecentric shift exists and the part involved in forming the inner pattern of the diffracted light is + 1st order, 0th order, and -shielding, the illumination light is blocked outside the pupil plane of the projection optical system. Consider the case where all are reached on the wafer without any problem. As long as there is no telecentric shift, the shift of the pattern to be transferred does not occur even if the focus position is shifted.
[167] However, if only the diffracted light of one of the opposite diffracted light (for example, + 1st order light) can be blocked by several methods before reaching the wafer, the two-beam interference component of 0th order and -1st order light and 0th order light and The ratio of the +1 order of light to the two-beam interference component collapses. For this reason, when a focus shift occurs, this focus shift can be detected as a position shift of a pattern.
[168] By using the above two effects, in the following embodiments, the actual device pattern is disposed at a position where the diffracted light is not blocked, and the focus monitor pattern is disposed at a position where the diffracted light is blocked, or a process for blocking the same. Is carried out. After the configuration as described above, if the position shift of the focus monitor pattern is observed by the alignment accuracy measuring device, the shift of focus can be easily measured with high accuracy.
[169] More specifically, using a box-in box pattern as the focus monitor pattern, one of the inner and outer patterns is formed at a fine pitch, and the other is formed at a rough pitch. Since the diffraction angle of the diffracted light from the fine pitch pattern is larger than that of the rough pitch, the former diffracted light is blocked, while the latter diffracted light is set not to be blocked. That is, in the former, the positional shift due to the focus shift occurs, and in the latter, the positional shift due to the focus shift occurs.
[170] In this case, since only one pattern causes position shift when the focus shift occurs, the focus monitor can be detected by detecting the shift between the inner and outer patterns. In addition, when the focus monitor pattern is disposed outside the region where the device pattern is formed, the above-described focus monitor can be performed without any limitation on the device pattern region.
[171] Therefore, according to the following embodiments, it is possible to accurately measure the focus by the projection optical system with high sensitivity without using a special mask for the focus monitor. Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[172] (Example 11)
[173] In the eleventh embodiment, as the focus monitor pattern, the mark of the box-in-box pattern that can detect the position shift with the alignment accuracy measuring device is used. Some of the marks have been improved to have a focus detection effect and the arrangement of the marks themselves has been studied.
[174] 21A to 21F are plan views of the focus monitor pattern used in the eleventh embodiment. The focus monitor pattern includes a large box mark (pattern) 2301 having a wide opening provided on the outside, and a small box mark (pattern formed of a fine pattern inside the opening). 2230.
[175] The large box mark 2301 may have a predetermined width as shown in Fig. 21A, or may be formed so as to have an opening in the light shielding surface as shown in Fig. 21B. Further, in Fig. 21A, a plurality of wide patterns may be formed concentrically.
[176] In addition, the inside and outside small box patterns 2302 are formed by forming a line and space (L / S) pattern in a fine rectangular pattern as shown in Figs. 21A and 21B, and by a simple L / S pattern as shown in Fig. 21C. And a checkered pattern as shown in Fig. 21D.
[177] As these improvements, as shown in Figs. 21E and 21F, it is also possible to use a pattern in which the relationship between the inside and the outside is reversed. That is, the outer large box mark 2301 may be formed in a fine pattern (L / S or checkered pattern), and the inner small box mark 2302 may be formed in a wide pattern (a rectangle having a large area).
[178] However, in the following description, as shown in Figs. 21A to 21D, the outer large box mark 2301 is a wide pattern and the inner small box mark 2302 is a fine pattern.
[179] In the focus monitor pattern as shown in Figs. 21A to 21D, if only one of the ± first-order diffraction light (opposite first-order diffraction light) from the inner small box mark 2302 can be blocked by any method, On the wafer, the ratio of the two luminous flux components of the 0th order light and the + 1st order light and the second luminous flux component of the 0th order light and the -1st order light is collapsed. Thereby, when the focus position shifts, the position shift of the pattern itself occurs, and this is transferred onto the wafer.
[180] On the contrary, a relatively large pattern is adopted for the outer large box mark 2301 so that the diffracted light by this mark is not blocked. Based on such a setting, the amount of focus displacement can be detected easily by measuring the relative shift | offset | difference of both transfer patterns using the alignment precision measuring apparatus.
[181] However, if the diffracted light from the device pattern on the exposure mask is blocked at the same time, even if the focus accuracy can be measured, there is a fear that it will adversely affect the imaging characteristics of the most important device pattern itself. For this reason, it is necessary to carry out the study of blocking only one side of the first diffracted light from the small box mark of the box in box pattern which is the focus monitor pattern without blocking the diffracted light from the device pattern. In the following, the resulting study will be described.
[182] In the first embodiment, a pellicle frame is used as a means for blocking only one side of the first diffracted light from the small box mark in the box in box pattern. The ferrule frame supports a ferrite film for protecting the surface of the exposure mask, and the exposure mask is generally provided for exposure in the state where these are attached. With the Pericle frame, the introduction of a new process on mask fabrication is not necessary and does not involve a cost increase.
[183] Fig. 22 shows the positional relationship between the device pattern 2604 and the box-in-box type focus monitor pattern 2605, or the pellicle frame 2608 and the pellicle film 2609, together with a partial cross-sectional view of the exposure mask. . In Fig. 22, reference numeral 2600 denotes a transparent substrate transparent to exposure light, 2601 denotes a pattern region in which an actual device pattern exists, 2602 denotes a dicing region in which a focus monitor pattern 2605 and alignment marks exist, and 2603 Shows the periphery where the mask alignment mark is disposed.
[184] In addition, the focus monitor pattern 2605 is shown in the cross-sectional (or side) shape of the outer large box pattern 2301 (FIG. 21A), and the detailed illustration is omitted, but the inner small box pattern 2302 (FIG. 21a).
[185] In the eleventh embodiment, the focus monitor pattern 2605 is disposed at the outermost portion of the dicing area 2602, and the diffracted light effective for the imaging from the device pattern 2604 is blocked by the pericle frame 2608. Without this, only the inner pattern of the focus monitor pattern 2605 is arranged to be blocked. The specific determination procedure of this arrangement is shown below.
[186] Since NA (Numerical Aperture) has already been determined in the exposure apparatus, the maximum diffraction angle θp of the first-order diffraction light is limited to sinθp = NA / n when the n-fold member mask is used. That is, even if the diffraction angle of the primary diffracted light is diffracted at θp, that is, sin ⁻¹ (NA / n) or more, the pupil of the projection optical system cannot be transmitted, so it is not necessary to consider it here.
[187] Here, the case where the diffracted light 2607 from the small box mark of the focus monitor pattern 2605 is blocked by the pericle frame 2608 can be considered. If the height H of the pericle frame 2608 is determined, the position for not allowing the pericle frame 2608 to block the diffracted light 2606 from the pattern region 2601 is determined. This position is shown in FIG. 22 by the distance from the end of the dicing area 2602 to the _peripheral frame 2608, and the minimum distance _thereof is represented by L _fMIN . In other words, when this distance is larger than L _fMIN , the first-order diffracted light 2606 from the device pattern region 2601 is not blocked by the pericle frame 2608.
[188] In order to block the first-order diffracted light from the small box mark included in the monitor pattern 2605, the height H of the _ferrule frame 2608 and the L _fMIN and the minimum diffraction angle of the diffracted light from the small box mark θ _fMIN ) only satisfies the relationship of tan _{θ fMIN} > L _fMIN / H.
[189] From the above, it can be seen that the small box mark may be configured in a fine pattern so that the first-order diffracted light is diffracted in the range where tan ^-1 (L _fMIN / H) <θ _fMIN <sin ^-1 (NA / n) have.
[190] Next, the condition of this angle is considered from the viewpoint of the pitch of the small box mark. In general, the relationship between the light diffracted by a diffraction grating (in this case, the mask pattern) and its angle is the diffraction angle θ, the mask pattern pitch d, the exposure wavelength λ, and the diffraction order m. Dcos θ = mλ. Since only the first order can be considered as the diffraction order, the above formula is m = 1 and cosθ = λ / d. Applying this again to the conditional equation for the diffraction angle θf from the small box mark
[191]
[192] Becomes By setting the pattern pitch to satisfy this condition, only one component of the first-order diffraction light from the small box mark can be blocked without blocking the diffracted light from the device pattern 604.
[193] Next, when the pitch of the small box mark is set to a constant value within the above range, the position at which the ferrule frame for blocking only the first diffracted light is to be arranged is considered. Although the case where the diffraction angle which satisfies this condition is the minimum (θ _fMIN ) is shown in FIG. 23, the first order diffracted lights 2606 and 2607 from the device pattern 2604 and from each of the small box marks are paralleled. That is, as an intermediate condition of Figs. 22 and 23, as shown in Fig. 24, when the inner wall of the ferrule frame 2608 is between A and B, that is, between the width Ld of the dicing area, It can be seen that only one component of the first diffracted light can be blocked, and thus it can be applied as a focus monitor mask.
[194] Specifically, the distance L from the focus monitor pattern 2605 to the pericle frame 2608 is
[195]
[196] That is, it is _understood that L may be set to exist within the range of L _d from L _fMIN .
[197] Specific application examples are shown below. The exposure conditions used here were exposure wavelength lambda = 248 nm, wafer-side numerical aperture NA = 0.68, coherence factor б = 0.75 of illumination, and the magnification of the mask pattern was 4. In the used exposure mask, the box-in-box focus monitor pattern 2605 shown in FIG. 21A was disposed at the end of the dicing area 2602. The width of the dicing area 2602 was 80 µm (wafer-shaped equivalent dimension). In addition, unless otherwise indicated, a dimension shall be referred to as a wafer-like converted dimension below.
[198] The width of the outer box mark was 2 µm, the width of the inner box mark was 2 µm, and the internal pitch was composed of a 0.3 µm L / S pattern satisfying the above expression (2). The height H of the used ferrule frame 2608 was 6 mm (mask shape). In addition, the ferrule frame 2608 is a position which satisfy | fills said Formula (3), and was arrange | positioned in the position whose distance from the focus monitor pattern 2605 is 1 mm (mask shape).
[199] First, the detection sensitivity at the time of performing actual exposure using the exposure mask was calculated | required. On the Si wafer, a coating anti-reflection film was spin-coated to a thickness of 60 nm and then formed by heat treatment, and a chemically amplified positive resist was formed to have a thickness of O.4. Spin coating to μm. Thereafter, prebaking was performed at 100 ° C. for 90 seconds. These series of treatments were performed in a coater and deve loper connected to the exposure apparatus. The wafers after these processes were completed were transferred to the exposure apparatus, and exposure was performed using the exposure mask.
[200] The exposure changed four types of 17.5 mJ / cm <2>, 20 mJ / cm <2>, 22.5 mJ / cm <2>, 25 mJ / cm <2> and defocusing from -0.5 micrometer to +0.5 micrometer in 0.1 micrometer scale for setting exposure amount of the exposure apparatus. . The defocus dependence of the center position shift amount of the center of an outer box mark and the inner box mark was measured with the alignment accuracy measuring apparatus for the exposed focus monitor pattern.
[201] Fig. 25 shows the relationship between the amount of position shift and the defocus at this time. From Fig. 25, it was found that the focus shift of 0.1 mu m corresponds to the position shift amount 100 nm, regardless of the exposure amount. Since the reproducibility of the alignment accuracy measuring device used this time was 2.5 nm, it was understood that the sensitivity of the focus monitor pattern used at this time can realize a high focus detection sensitivity of 25 nm when the accuracy of the focus is corrected. As a result of investigating the effects, a problem was found in the transfer accuracy when the pattern closest to the focus monitor pattern and the pattern close to the center portion of the mask were compared.
[202] As described above, when the ferrule frame is provided at a position satisfying the above-described conditions (Equations 2 and 3), the focus accuracy can be detected by shifting the pattern without affecting the device pattern. I could see that. As an actual measurement, an alignment inspection apparatus may be used to measure the relative misalignment between the outer box mark and the inner box mark, and the detection accuracy of the focus shift including the direction is high without using a special mask technique using a conventional phase shift film. Could be obtained.
[203] In addition, although the box for box type focus monitor pattern was used for the exposure mask used this time, it is not limited to this, The conditions which block the diffraction light which showed the above-mentioned part of the detectable mark in the alignment precision measuring apparatus are made | formed. If you can. It is also possible to use the inversion pattern of Figs. 21A to 21F.
[204] In addition, when it is difficult to arrange a ferrule frame without narrowly affecting a device pattern area | region, as shown in FIG. 26, the focus monitor pattern 2605 may be arrange | positioned in the corner part of a mask. In this way, the distance from the pattern area 2601 to the focus monitor pattern 2605 is approximately 1.4 times. Therefore, the positional accuracy of the ferrule frame 2608 can be relaxed.
[205] As shown in Fig. 27A, the focus monitor pattern 2605 is disposed at a place outside the dicing area 2602 but not overlapping the device area of the adjacent chip, and the exposure area is the focus monitor pattern 2605. You may perform exposure by setting to the area | region containing this. In this case, since the distance from the device pattern area 2601 to the ferrule frame (not shown, reference numeral 2608 in Fig. 22) is increased, it is effective in reducing the positional accuracy of the ferrule frame.
[206] Fig. 27B shows a state in which the mask pattern of Fig. 27A is formed on the wafer with step and repeat, in which case the focus monitor pattern 2605 is exposed to the dicing area 2602 of the adjacent chip.
[207] In the eleventh embodiment, the example in which the focus monitor pattern is arranged in the same mask as the device pattern has been described. However, the above-described focus monitor pattern may be disposed and used in a quality control reticle used to manage the state of the apparatus. In addition, when the relative positional accuracy of a ferric frame and a focus monitor pattern is severe, for example, as shown in FIG. 28, a plurality of focus monitor patterns 2605 are moved little by little and placed as a focus monitor pattern after inspection. It may be used to show the desired performance (that is, satisfying the relationship of the above-described equation (3)).
[208] As described above, according to the eleventh embodiment, only one of the ± 1st order diffracted light from the small box mark of the focus monitor pattern is blocked in order to measure the amount of focus misalignment, so that the focus accuracy on the wafer is measured as the amount of position misalignment with high accuracy. I can do it. As a result, the exposure can be always performed with an appropriate focus, thereby contributing to the improvement of the yield.
[209] Until now, there has been a method of measuring focus accuracy, but there is a limitation that a special pattern or a phase shift film must be used for the purpose. In contrast, in the eleventh embodiment, the focus precision can be measured by adding a slight improvement to the existing mask without using such a special mask. In the measurement, since the existing alignment accuracy measuring device can be used, there is no need to use a new device specifically for this purpose.
[210] (Example 12)
[211] Fig. 29 is a sectional view showing the configuration of main parts of the mask for exposure according to the twelfth embodiment. Incidentally, in the following embodiment, the same reference numerals are given to the same parts as in Fig. 22, and overlapping descriptions are omitted.
[212] In the eleventh embodiment, although the primary diffracted light of the box-in box pattern is blocked by the ferrule frame 2608, any one may be used as long as it blocks only one side of the diffracted light. Thus, a process such as selecting a region and giving a color to the pellicle film 2609 that transmits light originally used for exposure is performed to a portion that transmits light and a portion 2610 that does not transmit light. Divide. Only one side of the diffracted light 2607 from the small box mark is blocked by the colored portion 2610 of the pellicle film 2609, and the diffracted light 2606 from the device pattern 2604 passes through the pellicle film 2609. do.
[213] As described above, in the twelfth embodiment, by providing a portion 2610 that imparts color to a part of the area of the liquid film 2609 and does not transmit light, the first order from the small box mark of the focus monitor pattern 2605 is provided. Only one side of the diffracted light 2607 can be blocked. Therefore, focus accuracy can be measured as in the case of the eleventh embodiment, and the same effect as in the eleventh embodiment can be obtained.
[214] (Example 13)
[215] Fig. 30 is a sectional view showing the configuration of main parts of the mask for exposure according to the thirteenth embodiment. In the thirteenth embodiment, the light shielding member 2710 for blocking only one side of the first diffracted light of the box in box pattern is disposed at an appropriate position. In particular, it is effective when the diffracted light cannot be blocked by the ferrule frame 2608 or the pericle film 2609 due to any limitation in mask preparation.
[216] Also in the method of the thirteenth embodiment, since only one side of the first diffracted light 2607 from the small box mark of the focus monitor pattern 2605 can be blocked, focus accuracy can be measured as in the eleventh embodiment.
[217] (Example 14)
[218] Fig. 31 is a plan view showing the main part structure of the exposure mask according to the fourteenth embodiment. As in the thirteenth embodiment, a case may be considered in which the pericle frame 2608 for blocking only the diffracted light from the box in box pattern is not provided at the predetermined position. Specifically, it is a case where the alignment mark on a mask exists in the outer vicinity of a mask substrate. Since the pericle frame 2608 needs to surround the entire pattern on the mask, it must surround the alignment mark on the mask as well as the pattern area.
[219] In such a case, if the focus monitor pattern 2605 of the dicing area 2602 is not in the vicinity of the reticle alignment mark, in order to block one side of the primary diffracted light 2607 from the small box mark. The special part 2810 is crushed to the pericle frame 2608. As a result, even when the peripheral frame 2608 cannot be disposed at a position to block one side of the primary diffraction light 2608 from the small box mark, only the diffraction light can be blocked by the component 2810. Therefore, also in the method of the fourteenth embodiment, the same effects as in the eleventh embodiment can be obtained.
[220] (Example 15)
[221] Fig. 32 is a sectional view showing the configuration of main parts of the exposure mask according to the fifteenth embodiment. Contrary to the case of the thirteenth and fourteenth embodiments, when the ferrule frame 2608 is too close to the pattern region 2601, both diffracted light from the focus monitor pattern 2605 and the device pattern 2604 ( There is a possibility that 2606, 2607 is blocked by the ferrule frame 2608. In such a case, a hole may be opened and transmitted to a portion of the ferrule frame 2608 in which diffracted light from the device pattern 2604 is blocked. Of course, the first-order diffracted light 2607 from the small box mark of the focus monitor pattern 2605 needs to be fixed at a height that is blocked.
[222] Also in the method of the fifteenth embodiment, since only one side of the first diffracted light 2607 from the small box mark of the focus monitor pattern 2605 can be blocked, and the diffracted light from the device pattern 2604 can be transmitted, Effects similar to those of the eleventh embodiment can be obtained.
[223] (Example 16)
[224] Fig. 33 is a sectional view showing the configuration of main parts of the exposure mask according to the sixteenth embodiment. In the eleventh embodiment, the focus monitor pattern is placed at the shortest end of the dicing area to obtain various conditions, but the present invention is not limited thereto. As shown in FIG. 33, the length of the dicing area itself is Ld, the one side of the small box mark of the focus monitor pattern 2605 is x, and the dicing area 2602 is formed from the center of the focus monitor pattern 2605. If the distance to the end of y is y, in the eleventh embodiment, if Ld is simply replaced with Le = Ld-x / 2-y, the focus precision is obtained by the present mask under the same conditions as in the eleventh embodiment. It can be measured.
[225] In addition, in FIG. 22 mentioned above, the diffracted light from the focus monitor pattern 2605 is drawn from the left end of the pattern 2605 for easy understanding. However, the origin of the diffracted light strictly depends on the arrangement of the monitor patterns. In the sixteenth embodiment, the small box mark is formed in a fine pattern, and the large box mark is formed in a thick pattern. Since the diffraction angle of the finer pattern is larger than the diffraction angle of the thick pattern, the diffraction light of the fine pattern is drawn in FIG. In Fig. 33, since all the diffracted light emitted from the fine pattern to the left direction should not be blocked by the pericle frame 2608, the right end of the small box mark is the starting point of the diffracted light. L defined in the above expression (3) needs to be determined in consideration of the above.
[226] In addition, in the eleventh to sixteenth embodiments, the focus accuracy was measured from the relative distance between the inner and outer patterns by using the box in box pattern as shown in Figs. 21A to 21F as the focus monitor pattern. The pattern is not limited to these. As long as only one side of the first-order diffracted light can be blocked, any pattern may be used.
[227] For example, in a pattern in which the primary diffracted light reaches both the wafers by increasing the pattern pitch and decreasing the diffraction angle, even if the focus is shifted, no position shift occurs. By placing such a pattern in the vicinity of the focus monitor pattern, the focus accuracy can be measured from the relative distance between them.
[228] Moreover, also regarding a measurement, there is no restriction that an alignment inspection apparatus must be used. Only the first diffracted light is blocked, and the relative shift between the pattern shifted onto the wafer due to the focus shift and the pattern that does not block the diffraction light entirely, that is, the position that does not cause shift due to the focus. It can be used as long as it can measure.
[229] As described above, according to the eleventh to sixteenth embodiments, the focus monitor pattern is formed in two types of patterns having different diffraction angles, and one of the opposite diffracted light beams from the pattern having the larger diffraction angle is blocked. This makes it possible to detect focus shift from two kinds of pattern shift.
[230] In this case, the focus monitor pattern does not need to be particularly formed in the mask for the monitor, and it can be used for the focus monitor even if it is disposed outside the pattern region where the device pattern is formed. Therefore, the focus by the projection optical system can be measured with high sensitivity with high sensitivity without using a special mask for the focus monitor.
[231] The present invention can realize a focus monitor method capable of accurately and accurately measuring focus by a projection optical system with a high sensitivity without using a special mask for a focus monitor.

权利要求:
Claims (43)
[1" claim-type="Currently amended] A focus monitor method for monitoring an effective focus by transferring a pattern for a focus monitor on a mask illuminated by electromagnetic waves or electron beams onto a substrate to be exposed by projection optics and measuring misalignment of the pattern on the substrate. ,
Preparing the mask having the focus monitor pattern formed of at least two kinds of pattern groups;
Illuminating the pattern group A of the at least two pattern groups with the illumination light when the center of gravity of the illumination light source in the illumination optics is off-axis;
Illuminating at least the pattern group B of the at least two pattern groups with illumination light in a state where the center of gravity of the illumination light source is on the axis;
And measuring a positional deviation between the pattern group A and the pattern group B transferred onto the substrate.
[2" claim-type="Currently amended] The method of claim 1, wherein the preparing of the mask comprises disposing the pattern group A at an arbitrary portion of a dicing region surrounding the semiconductor device pattern region on the mask, and the pattern group B of the pattern group A Disposing the mask at a different position in the dicing region that is substantially opposite to the placement position with the semiconductor device pattern region interposed therebetween; and stepping the stage on which the substrate is mounted, thereby placing the mask on the substrate by the projection optical system. Disposing at a distance from the pattern group A by a distance approximately corresponding to the stepping amount when transferring to
Illuminating the pattern group A with the illumination light in the state where the center of gravity of the illumination light source is off-axis and illuminating the pattern group B with the illumination light in the state where the center of gravity of the illumination light source is on the axis, Stepping the stage on which the substrate is mounted in order to transfer the mask onto the substrate by the projection optical system,
Measuring the relative positional deviation between the pattern group A and the pattern group B, the substrate after the step (N + 1) times the pattern group A transferred to the substrate after N times (N is a positive integer) stepping the substrate And measuring the positional deviation from the pattern group B transferred onto the image.
[3" claim-type="Currently amended] The method of claim 1, wherein the preparing of the mask on which the focus monitor pattern is formed comprises: providing the focus monitor pattern including at least four types of pattern groups and a pattern group among the at least four types of pattern groups. Arranging A and the pattern group C close to an arbitrary portion of the dicing region surrounding the semiconductor device pattern region on the mask, wherein the pattern group B and the pattern group D of the at least four types of pattern groups Disposing the mask at a different position in the dicing region which is substantially opposite to the arrangement position of A and the pattern group C, with the semiconductor device pattern region interposed therebetween; The pattern group A and the pattern group by a distance approximately equivalent to the stepping amount when transferring onto the substrate by the projection optical system. Disposing each from C and disposing it,
Illuminating at least the pattern group B with illumination light in the state where the center of gravity of the illumination light source is present on the axis, wherein the pattern group B, C, D is present with the axis of gravity of the illumination light source being present on the axis Illuminating by said illumination light in a state,
Illuminating the pattern group A with the illumination light in a state where the center of gravity of the illumination light source is axially displaced and illuminating the pattern group B with the illumination light in the state where the center of gravity of the illumination light source is on the axis, Stepping said stage on which said substrate is mounted, thereby transferring said mask onto said substrate by said projection optical system,
The step of measuring the positional deviation between the pattern group A and the pattern group B may include: after stepping with the pattern group A transferred to the substrate after N times (N is a positive integer) and after (N + 1) times Measuring a first positional shift amount α with the pattern group B transferred onto the substrate, and after (N + 1) times stepping with the pattern group C transferred onto the substrate after N times stepping on the substrate And measuring a second positional deviation amount β with the pattern group D transferred to the pattern group D, and calculating the positional deviation by dividing the β from the α.
[4" claim-type="Currently amended] The combination of the said pattern group A and the said pattern group B, and the combination of the said pattern group C and the said pattern group D is a box in the box pattern which surrounds a 1st pattern group by a 2nd pattern group. And a combination of the first pattern group and the second pattern group.
[5" claim-type="Currently amended] The focus monitor method according to claim 3, wherein the combination of the pattern group A and the pattern group B and the combination of the pattern group C and the pattern group D are combinations of line patterns having the same width.
[6" claim-type="Currently amended] 4. The method of claim 3, wherein the calculating of the positional deviation by dividing β from α is performed on the substrate after stepping with the pattern group A transferred on the substrate after N stepping (N + 1). Measuring the pattern dimension on the substrate formed by the double exposure with the pattern group B thus obtained as the first position shift amount α, and the pattern group C and (N + 1) transferred onto the substrate after N stepping. Measuring the pattern dimension on the substrate formed by double exposure with the pattern group D transferred on the substrate after stepping step as the second position shift amount β, and dividing the position by dividing the β from the α Calculating a deviation.
[7" claim-type="Currently amended] The method of claim 3, wherein the calculating of the positional deviation by dividing the β from the α is performed on the substrate after stepping with the pattern group A transferred on the substrate after N stepping (N + 1). Measuring the distance with the transferred pattern group B as the first positional shift amount α, and after stepping N times onto the substrate after N times stepping on the substrate after (N + 1) times Measuring the distance from the pattern group D transferred to the second position shift amount β, and calculating the position deviation by dividing the β from the α. .
[8" claim-type="Currently amended] The method according to claim 1, wherein the step of illuminating the pattern group A with illumination light in a state where the center of gravity of the illumination light source is axially displaced comprises: shading between one region of the mask corresponding to the pattern group A and the illumination light source. And arranging a member, and shielding a part of the illumination light illuminating the pattern group A.
[9" claim-type="Currently amended] The method of claim 1, wherein the step of illuminating the pattern group A with the illumination light in a state in which the center of gravity of the illumination light source is axially displaced is a surface facing the illumination light source of the mask 1 region corresponding to the pattern group A. And arranging an optical element for deflecting the optical path in one direction in the vicinity thereof.
[10" claim-type="Currently amended] The focus monitor method according to claim 9, wherein a wedge-shaped transmission member or a diffraction grating is used as the optical element for deflecting the optical path in one direction.
[11" claim-type="Currently amended] The method according to claim 1, wherein the pattern group A is illuminated by illumination light in a state in which the center of gravity of the illumination light source is axially displaced, and the illumination source in one region of the mask corresponding to the pattern group A And arranging a light blocking member at or near an optically conjugate position with respect to the surface, and shielding a part of the illumination light illuminating the pattern group A.
[12" claim-type="Currently amended] 12. The focus monitor method according to claim 11, wherein the optically conjugate position is a position of a reticle blind in the illumination optical system.
[13" claim-type="Currently amended] The method of claim 1, wherein the step of illuminating the pattern group A with the illumination light in a state where the center of gravity of the illumination light source is axially displaced is opposite to the illumination light source in one region of the mask corresponding to the pattern group A. And disposing an optical element for deflecting the optical path in one direction at or near the optically conjugate position with respect to the surface.
[14" claim-type="Currently amended] The focus monitor method according to claim 13, wherein a wedge-shaped transmission member or a diffraction grating is used as the optical element for deflecting the optical path in one direction.
[15" claim-type="Currently amended] The method of claim 13, wherein the optically conjugate position is the position of the reticle blind in the illumination optics.
[16" claim-type="Currently amended] The effective focus is monitored by transferring the first and second patterns on the focus monitor mask illuminated by electromagnetic waves or electron beams onto the substrate to be exposed by the projection optical system, and measuring the first and second patterns on the substrate. As an exposure apparatus to
An illumination optical system for illuminating the first pattern in a state where a center of gravity of an illumination light source is present on an axis;
An exposure apparatus having a component configured to be able to illuminate the second pattern in a state where the center of gravity is excluded from the axis via the illumination optical system.
[17" claim-type="Currently amended] The light emitting member of claim 16, wherein the component includes a light blocking member disposed at or near an optically conjugate position with respect to a forming surface of the second pattern between the second pattern and the illumination light source. Exposure apparatus made into.
[18" claim-type="Currently amended] 18. An exposure apparatus according to claim 17, wherein the optically conjugate position is the position of the reticle blind in the illumination optics.
[19" claim-type="Currently amended] 17. The device of claim 16, wherein the component is interposed between the second pattern and the illumination light source to deflect in one direction an optical path disposed at or near the optically conjugate position with respect to the formation surface of the second pattern. An exposure apparatus comprising an optical element.
[20" claim-type="Currently amended] 20. An exposure apparatus according to claim 19, wherein the optically conjugate position is the position of the reticle blind in the illumination optics.
[21" claim-type="Currently amended] 20. An exposure apparatus according to claim 19, wherein the optical element for deflecting the optical path in one direction is a wedge-shaped transmission member or a diffraction grating.
[22" claim-type="Currently amended] A transparent substrate having a first and a second main surface, the second main surface having a first and a second pattern for a focus monitor formed on the first main surface opposite to an illumination light source;
And a component for axially shifting the center of gravity of the illumination light source disposed on or in the transparent substrate so as to shield the second pattern from the illumination light source.
[23" claim-type="Currently amended] 23. The exposure mask according to claim 22, wherein a light shielding member is provided as a component for causing the center of gravity of the illumination light source to be in an axial deviation state.
[24" claim-type="Currently amended] 23. An exposure mask according to claim 22, further comprising an optical element for deflecting the optical path in one direction as a component for causing the center of gravity of the illumination light source to be in an axial deviation state.
[25" claim-type="Currently amended] 25. An exposure mask according to claim 24, wherein the optical element for deflecting the optical path in one direction is a wedge-shaped transmission member or a diffraction grating.
[26" claim-type="Currently amended] An exposure mask used for transferring a device pattern onto a wafer via a projection optical system,
A transparent substrate having a main surface,
The device pattern formed in the pattern region on the main surface of the transparent substrate;
A focus monitor pattern which is provided in an area outside the pattern area on the main surface of the transparent substrate and formed into two kinds of patterns having different diffraction angles;
And a shielding portion which blocks components of any one of two opposite diffraction beams passing through the pupil of the projection optical system by diffraction light from the pattern having the larger diffraction angle among the focus monitor patterns. Exposure mask.
[27" claim-type="Currently amended] 27. The method of claim 26, wherein the focus monitor pattern comprises a first pattern group and a second pattern group substantially surrounding the first pattern group, wherein the first pattern group and the second pattern group have a line width. Another mask for exposure.
[28" claim-type="Currently amended] 27. An exposure mask according to claim 26, wherein said shield passes a light beam passing through a pupil of said projection optical system among diffracted light from said device pattern.
[29" claim-type="Currently amended] 27. The exposure mask according to claim 26, wherein said shielding part blocks any one of two primary diffracted light beams opposite from the pattern having the larger diffraction angle of said focus monitor pattern.
[30" claim-type="Currently amended] 27. The exposure mask according to claim 26, wherein the focus monitor pattern is provided in plural numbers by changing a distance from the pattern area.
[31" claim-type="Currently amended] 27. The protection member according to claim 26, further comprising a protection member including a pellicle frame surrounding the pattern region and a pellicle film for sealing an opening side of one end of the pellicle frame to protect the main surface of the transparent substrate. and,
The mask for exposure, characterized in that for blocking any one of the diffracted light by the ferrule frame.
[32" claim-type="Currently amended] The pitch p of the pattern having the larger diffraction angle among the focus monitor patterns is L, the distance from the pattern to the pellicle frame is H, and the height of the pellicle frame is H. When the wavelength of the exposure light in the optical system is λ, the wafer-side numerical aperture is NA, and the magnification is n,
tan ^-1 (L / H) <cos ^-1 (λ / p) <sin ^-1 (NA / n)
A mask for exposure, characterized in that to satisfy the relationship.
[33" claim-type="Currently amended] 27. The apparatus of claim 26, further comprising a protection member including a pellicle frame surrounding the pattern region for protecting a main surface of the transparent substrate, and a pellicle film for closing an opening side of one end of the pellicle frame. ,
A mask for exposure, characterized in that a light shielding member for blocking any one of the diffracted light is provided in a part of the pericle film.
[34" claim-type="Currently amended] The pattern pitch p according to claim 33, wherein the diffraction angle is larger in the focus monitor pattern, where L 'is the distance from the pattern to the light shielding member attached to the pellicle film, and the height of the pellicle frame is set. Assuming that the wavelength of the exposure light in the projection optical system is λ, the wafer-side numerical aperture is NA, and the magnification is n,
tan ^-1 (L '/ H) <cos ^-1 (λ / p) <sin ^-1 (NA / n)
A mask for exposure, characterized in that to satisfy the relationship.
[35" claim-type="Currently amended] Transferring the device pattern and the focus monitor pattern onto a wafer using the exposure mask of claim 26;
Measuring a position shift occurring between the first pattern group and the second pattern group of the focus monitor pattern transferred onto the wafer;
And detecting the positional shift amount as a focus shift value.
[36" claim-type="Currently amended] In the focus monitor method when transferring a device pattern on a wafer via a projection optical system using the exposure mask in which the device pattern was formed in the pattern area on the main surface of a transparent substrate,
Providing a focus monitor pattern formed in two kinds of patterns having different diffraction angles in an outer region of the pattern region on one main surface of the transparent substrate;
When the device pattern is transferred onto a specimen, one of the opposite diffracted light passing through the pupil of the projection optical system is blocked by the diffracted light from the pattern having the larger diffraction angle among the focus monitor patterns. Performing the processing
Generating a position shift on the sample between the two kinds of patterns of the focus monitor pattern;
Detecting the position shift amount as a focus shift value.
[37" claim-type="Currently amended] The focus monitor method according to claim 36, wherein as the focus monitor pattern, a box-in box pattern having a different diffraction angle in an inner pattern and an outer pattern is used.
[38" claim-type="Currently amended] The method of claim 36, wherein the blocking of the diffracted light includes passing a light beam passing through the pupil of the projection optical system with respect to the diffracted light from the device pattern.
[39" claim-type="Currently amended] 37. The focus monitor method according to claim 36, wherein the blocking of the diffracted light includes performing by a light blocking member disposed while the diffracted light passes through the exposure mask and reaches the sample.
[40" claim-type="Currently amended] 37. The focus monitor method of claim 36, wherein the blocking of the diffracted light includes using a ferrule frame disposed on the exposure mask.
[41" claim-type="Currently amended] 41. The pattern pitch p according to claim 40, wherein the larger the diffraction angle is in the focus monitor pattern, wherein L is the distance from the pattern to the pellicle frame and H is the height of the pellicle frame. When the wavelength of the exposure light in the projection optical system is λ, the wafer-side numerical aperture is NA, and the magnification is n,
tan ^-1 (L / H) <cos ^-1 (λ / p) <sin ^-1 (NA / n)
Focus monitor method characterized in that to satisfy the relationship.
[42" claim-type="Currently amended] 37. The focus monitor method of claim 36, wherein the blocking of the diffracted light includes attaching a light blocking member to a portion of the pericle film disposed on the mask.
[43" claim-type="Currently amended] 43. The pattern pitch p according to claim 42, wherein the diffraction angle is larger in the focus monitor pattern, wherein L 'is the distance from the pattern to the light blocking member attached to the pellicle film. When the height is H, the wavelength of the exposure light in the projection optical system is λ, the wafer-side numerical aperture is NA, and the magnification is n,
tan ^-1 (L '/ H) <cos ^-1 (λ / p) <sin ^-1 (NA / n)
Focus monitor method characterized in that to satisfy the relationship.

类似技术:

---

公开号 | 公开日 | 专利标题

---

US20200124542A1|2020-04-23|Diffraction Based Overlay Metrology Tool and Method of Diffraction Based Overlay Metrology

---

JP6618551B2|2019-12-11|Inspection apparatus, inspection method, lithographic apparatus, patterning device, and manufacturing method

---

JP4913169B2|2012-04-11|Method for aligning a substrate having an alignment mark

---

US5424552A|1995-06-13|Projection exposing apparatus

---

US5615006A|1997-03-25|Imaging characteristic and asymetric abrerration measurement of projection optical system

---

EP1429190B1|2012-05-09|Exposure apparatus and method

---

JP2963722B2|1999-10-18|Apparatus for projecting a mask pattern onto a substrate

---

TWI256484B|2006-07-01|Method of measuring aberration in an optical imaging system

---

KR100597041B1|2006-07-04|Device inspection method and apparatus

---

JP3843308B2|2006-11-08|Mask pattern image forming apparatus

---

JP3200894B2|2001-08-20|Exposure method and apparatus

---

EP0969327B1|2007-08-01|Multiple exposure apparatus and method

---

US6960415B2|2005-11-01|Aberration measuring method and projection exposure apparatus

---

JP3927774B2|2007-06-13|Measuring method and projection exposure apparatus using the same

---

JP4073735B2|2008-04-09|Method for measuring aberrations of a projection system of a lithographic apparatus and device manufacturing method

---

KR100306953B1|2001-11-30|Projection Exposure Equipment and Methods

---

TW536659B|2003-06-11|Substrate provided with an alignment mark in a substantially transmissive process layer, mask for exposing said mark, device manufacturing method, and device manufactured thereby

---

US6011611A|2000-01-04|Method of measuring aberration of projection optics

---

KR100871505B1|2008-12-05|Exposure apparatus and method

---

US6940585B2|2005-09-06|Evaluation mask, focus measuring method and aberration measuring method

---

TW578207B|2004-03-01|Method of inspection aligner, exposure method for correcting focus position, and method of manufacturing semiconductor device

---

JP3413067B2|2003-06-03|Projection optical system and projection exposure apparatus using the same

---

US7046342B2|2006-05-16|Apparatus for characterization of photoresist resolution, and method of use

---

KR100189287B1|1999-06-01|Registration accuracy measurement mark

---

KR100674045B1|2007-01-25|Illumination apparatus, exposure apparatus and device manufacturing method

同族专利:

---

公开号 | 公开日

---

KR100455684B1|2004-11-06|

---

US6701512B2|2004-03-02|

---

US20020100012A1|2002-07-25|

引用文献:

---

公开号 | 申请日 | 公开日 | 申请人 | 专利标题

---

法律状态:
2001-01-24|Priority to JP2001015975A

---

2001-01-24|Priority to JPJP-P-2001-00015975

---

2001-03-27|Priority to JPJP-P-2001-00090774

---

2001-03-27|Priority to JP2001090774A

---

2002-01-23|Application filed by 가부시끼가이샤 도시바

---

2002-07-31|Publication of KR20020062829A

---

2004-11-06|Application granted

---

2004-11-06|Publication of KR100455684B1

优先权:

---

申请号 | 申请日 | 专利标题

---

JP2001015975A|JP4109832B2|2001-01-24|2001-01-24|Exposure mask and focus monitor method|

---

JPJP-P-2001-00015975|2001-01-24|

---

JPJP-P-2001-00090774|2001-03-27|

---

JP2001090774A|JP4091263B2|2001-03-27|2001-03-27|Focus monitor method and exposure apparatus|